Infineon 700V CoolMOS P7 Type N-Channel MOSFET, 6 A, 700 V Enhancement, 3-Pin TO-252 IPD70R900P7SAUMA1
- RS庫存編號:
- 214-4394
- 製造零件編號:
- IPD70R900P7SAUMA1
- 製造商:
- Infineon
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TWD1,135.00
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TWD1,192.00
(含稅)
訂單超過 $1,300.00 免費送貨
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- 加上 4,900 件從 2026年8月10日 起發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 600 | TWD22.70 | TWD1,135.00 |
| 650 - 1200 | TWD22.20 | TWD1,110.00 |
| 1250 + | TWD21.80 | TWD1,090.00 |
* 參考價格
- RS庫存編號:
- 214-4394
- 製造零件編號:
- IPD70R900P7SAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Package Type | TO-252 | |
| Series | 700V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 900mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 30.5W | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 6.8nC | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.35mm | |
| Length | 6.65mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 700V | ||
Package Type TO-252 | ||
Series 700V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 900mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 30.5W | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 6.8nC | ||
Maximum Operating Temperature 150°C | ||
Height 2.35mm | ||
Length 6.65mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon 700V CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 6A Maximum Continuous Drain Current - IPD70R900P7SAUMA1
This MOSFET is a high-voltage, N-channel switching transistor designed for power conversion and switching applications. It operates across a wide temperature span and is intended for surface-mounted power designs where high blocking voltage and moderate current capability are required. The device supports enhancement-mode operation and is suited to systems that demand compact power components with controlled gate-drive characteristics.
Features and Benefits:
• 700V blocking voltage enabling high-voltage switching
• 6A continuous drain current for moderate load handling
• 900mΩ Rds(on) limiting conduction losses under load
• 6.8nC typical gate charge for faster gate transitions
• 30.5W maximum power dissipation for thermal headroom
• 16V maximum gate-source rating permitting robust gate drive
• 6A continuous drain current for moderate load handling
• 900mΩ Rds(on) limiting conduction losses under load
• 6.8nC typical gate charge for faster gate transitions
• 30.5W maximum power dissipation for thermal headroom
• 16V maximum gate-source rating permitting robust gate drive
Applications
• Suitable for SMPS primary switch duties in high-voltage supplies
• Ideal for offline power supplies requiring 700V blocking
• Used with power converters needing moderate continuous current
• Can be used for switched-mode topologies in industrial equipment
• Suitable for compact surface-mount power assemblies
• Ideal for offline power supplies requiring 700V blocking
• Used with power converters needing moderate continuous current
• Can be used for switched-mode topologies in industrial equipment
• Suitable for compact surface-mount power assemblies
What package type is provided for board mounting?
It is supplied in a TO-252 surface-mount package allowing soldered PCB attachment and efficient thermal contact.
How does temperature range affect deployment in harsh environments?
The device is specified to operate from -40°C up to 150°C, supporting applications with elevated junction temperatures and wide ambient variations.
What gate-drive constraints should be observed in designs?
The gate must not exceed ±16V relative to source, so gate-drive circuitry should include clamping or level-shifting to prevent overvoltage.
How does the device’s channel and mode influence circuit topology?
Being an N-channel enhancement device, it requires a positive gate-source voltage to conduct and is suitable for low-side or high-side switching with appropriate driver arrangements.
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