Infineon CoolMOS P7 N-Channel MOSFET, 4 A, 700 V Enhancement, 3-Pin TO-252 IPD70R1K4P7SAUMA1
- RS庫存編號:
- 214-9046
- 製造零件編號:
- IPD70R1K4P7SAUMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 卷，共 2500 件）*
TWD24,000.00
(不含稅)
TWD25,200.00
(含稅)
訂單超過 $1,300.00 免費送貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD9.60 | TWD24,000.00 |
| 12500 + | TWD9.30 | TWD23,250.00 |
* 參考價格
- RS庫存編號:
- 214-9046
- 製造零件編號:
- IPD70R1K4P7SAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 4A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS P7 | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 22.7W | |
| Forward Voltage Vf | 900mV | |
| Typical Gate Charge Qg @ Vgs | 4.7nC | |
| Maximum Gate Source Voltage Vgs | 16V | |
| Maximum Operating Temperature | 150°C | |
| Height | 2.41mm | |
| Standards/Approvals | No | |
| Width | 6.22mm | |
| Length | 6.73mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 4A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS P7 | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 22.7W | ||
Forward Voltage Vf 900mV | ||
Typical Gate Charge Qg @ Vgs 4.7nC | ||
Maximum Gate Source Voltage Vgs 16V | ||
Maximum Operating Temperature 150°C | ||
Height 2.41mm | ||
Standards/Approvals No | ||
Width 6.22mm | ||
Length 6.73mm | ||
Automotive Standard No | ||
Infineon CoolMOS P7 Series MOSFET, 700V Maximum Drain Source Voltage, 4A Maximum Continuous Drain Current - IPD70R1K4P7SAUMA1
This MOSFET is a high-voltage switching device designed for power conversion and drive applications. It operates across a wide temperature range and provides N-channel enhancement-mode switching capability suitable for surface-mounted assemblies in demanding electrical systems.
Features and Benefits:
• 700 V drain rating enables high-voltage switching applications
• 4 A continuous drain current supports moderate load currents
• 1.4 Ω low RDS(on) reduces conduction losses under load
• 22.7 W power dissipation allows sustained thermal handling
• 4.7 nC typical gate charge enables efficient switching control
• 16 V gate rating permits substantial gate-drive headroom
• 4 A continuous drain current supports moderate load currents
• 1.4 Ω low RDS(on) reduces conduction losses under load
• 22.7 W power dissipation allows sustained thermal handling
• 4.7 nC typical gate charge enables efficient switching control
• 16 V gate rating permits substantial gate-drive headroom
Applications
• Suitable for SMPS primary switch stages
• Ideal for motor-drive half-bridge switches
• Used with high-voltage industrial power supplies
• Can be used for switch-mode power regulation
• Appropriate for surface-mount power assemblies
• Ideal for motor-drive half-bridge switches
• Used with high-voltage industrial power supplies
• Can be used for switch-mode power regulation
• Appropriate for surface-mount power assemblies
What thermal range is acceptable for operation?
It is specified to function from −40 °C up to 150 °C.
What package style and mounting method does it use?
It is supplied in a TO-252 package and intended for surface mounting.
How many pins are available for PCB connection?
There are three electrical pins for standard MOSFET connection.
What is the typical forward voltage when conducting?
The forward voltage under specified conditions is 0.9 V.
What channel characteristics affect device behaviour?
It is an N-channel, enhancement-mode device with specified gate and drain limits.
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