Infineon HEXFET Type P-Channel MOSFET, 20 A, 55 V, 3-Pin TO-252 IRLR9343TRPBF
- RS庫存編號:
- 214-4474
- 製造零件編號:
- IRLR9343TRPBF
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 20 件）*
TWD564.00
(不含稅)
TWD592.20
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 3,440 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 20 - 480 | TWD28.20 | TWD564.00 |
| 500 - 980 | TWD27.40 | TWD548.00 |
| 1000 + | TWD25.70 | TWD514.00 |
* 參考價格
- RS庫存編號:
- 214-4474
- 製造零件編號:
- IRLR9343TRPBF
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Package Type | TO-252 | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 170mΩ | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 47nC | |
| Maximum Power Dissipation Pd | 79W | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 55V | ||
Package Type TO-252 | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 170mΩ | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 47nC | ||
Maximum Power Dissipation Pd 79W | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
This Infineon Digital Audio HEXFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
It has repetitive Avalanche Capability for Robustness and Reliability
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