Infineon HEXFET Type P-Channel MOSFET, 18 A, 55 V, 3-Pin TO-252 IRFR5505TRLPBF
- RS庫存編號:
- 217-2627
- 製造零件編號:
- IRFR5505TRLPBF
- 製造商:
- Infineon
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- RS庫存編號:
- 217-2627
- 製造零件編號:
- IRFR5505TRLPBF
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Series | HEXFET | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current (Id) | 18 A | |
| Maximum Drain Source Voltage (Vds) | 55 V | |
| Pin Count | 3 | |
| Package Type | TO-252 | |
| Automotive Standard | No | |
| Height | 6.22 mm | |
| Length | 6.73 mm | |
| Maximum Drain Source Resistance (Rds) | 110 mΩ | |
| Maximum Gate Source Voltage (Vgs) | 20 V | |
| Maximum Operating Temperature | 175 °C | |
| Maximum Power Dissipation (Pd) | 57 W | |
| Minimum Operating Temperature | -55 °C | |
| Mount Type | Surface | |
| Standards/Approvals | Lead-Free | |
| Typical Gate Charge (Qg) @ Vgs | 32 nC | |
| Width | 2.39 mm | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Series HEXFET | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current (Id) 18 A | ||
Maximum Drain Source Voltage (Vds) 55 V | ||
Pin Count 3 | ||
Package Type TO-252 | ||
Automotive Standard No | ||
Height 6.22 mm | ||
Length 6.73 mm | ||
Maximum Drain Source Resistance (Rds) 110 mΩ | ||
Maximum Gate Source Voltage (Vgs) 20 V | ||
Maximum Operating Temperature 175 °C | ||
Maximum Power Dissipation (Pd) 57 W | ||
Minimum Operating Temperature -55 °C | ||
Mount Type Surface | ||
Standards/Approvals Lead-Free | ||
Typical Gate Charge (Qg) @ Vgs 32 nC | ||
Width 2.39 mm | ||
The Infineon -55V Single P-Channel HEXFET Power MOSFET in a D-Pak package.
RoHS Compliant
Low RDS(on)
Industry-leading quality
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
175°C Operating Temperature
P-Channel MOSFET
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