Infineon HEXFET Type P-Channel MOSFET, 31 A, 55 V, 3-Pin TO-252 AUIRFR5305TRL
- RS庫存編號:
- 223-8457
- 製造零件編號:
- AUIRFR5305TRL
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD366.00
(不含稅)
TWD384.30
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 11,615 件從 2026年1月12日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 5 | TWD73.20 | TWD366.00 |
| 10 - 95 | TWD71.40 | TWD357.00 |
| 100 - 245 | TWD69.40 | TWD347.00 |
| 250 - 495 | TWD68.20 | TWD341.00 |
| 500 + | TWD63.00 | TWD315.00 |
* 參考價格
- RS庫存編號:
- 223-8457
- 製造零件編號:
- AUIRFR5305TRL
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 63nC | |
| Forward Voltage Vf | -1.3V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 63nC | ||
Forward Voltage Vf -1.3V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
The Infineon automotive qualified single P-channel HEXFET power MOSFET in a D2-pak package. The cellular design of power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. It is used in automotive and wide variety of applications because of fast switching speed and ruggedized device.
Advanced planar technology
Dynamic dV/dT rating
175°C operating temperature
Fast switching
Lead free
RoHS compliant
相關連結
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin TO-252 IRFR5305TRPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V TO-252 IRFR5505TRLPBF
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK
- Infineon HEXFET Type P-Channel MOSFET 55 V Enhancement, 3-Pin IPAK IRFU5305PBF
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252
- Infineon HEXFET Type P-Channel MOSFET 55 V, 3-Pin TO-252 IRLR9343TRPBF