製造零件編號

Infineon HEXFET Type P-Channel MOSFET, 20 A, 55 V, 3-Pin TO-252

RS庫存編號:: 214-4473
製造零件編號:: IRLR9343TRPBF
製造商:: Infineon

Infineon HEXFET Type P-Channel MOSFET, 20 A, 55 V, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2000 件）*

TWD25,200.00

(不含稅)

TWD26,460.00

訂單超過 $1,300.00 免費送貨

有庫存

加上 2,000 件從 2026年1月19日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2000 - 2000	TWD12.60	TWD25,200.00
4000 +	TWD12.30	TWD24,600.00

* 參考價格

RS庫存編號:: 214-4473
製造零件編號:: IRLR9343TRPBF
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	55V
	Package Type	TO-252
	Series	HEXFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	170mΩ
	Maximum Power Dissipation Pd	79W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	47nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 55V
	Package Type TO-252
	Series HEXFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 170mΩ
	Maximum Power Dissipation Pd 79W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 47nC
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Automotive Standard No

Datasheet - IRLR9343TRPBF

This Infineon Digital Audio HEXFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.

It has repetitive Avalanche Capability for Robustness and Reliability

Infineon HEXFET Type P-Channel MOSFET, 20 A, 55 V, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

相關連結