Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 10 A, 600 V Enhancement, 5-Pin ThinPAK IPL60R365P7AUMA1
- RS庫存編號:
- 214-4400
- 製造零件編號:
- IPL60R365P7AUMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 10 件）*
TWD374.00
(不含稅)
TWD392.70
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 2,780 件準備從其他地點送貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 740 | TWD37.40 | TWD374.00 |
| 750 - 1490 | TWD36.50 | TWD365.00 |
| 1500 + | TWD34.20 | TWD342.00 |
* 參考價格
- RS庫存編號:
- 214-4400
- 製造零件編號:
- IPL60R365P7AUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | ThinPAK | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 365mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -40°C | |
| Forward Voltage Vf | 0.9V | |
| Typical Gate Charge Qg @ Vgs | 13nC | |
| Maximum Power Dissipation Pd | 46W | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type ThinPAK | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 365mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -40°C | ||
Forward Voltage Vf 0.9V | ||
Typical Gate Charge Qg @ Vgs 13nC | ||
Maximum Power Dissipation Pd 46W | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
This Infineon 600V Cool MOS P7 super junction MOSFET continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class RonxA and the inherently low gate charge (QG) of the Cool MOS™ 7th generation platform ensure its high efficiency.
It has rugged body diode
Integrated RG reduces MOSFET oscillation sensitivity
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