Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK

RS庫存編號:: 215-2523
製造零件編號:: IPL60R285P7AUMA1
製造商:: Infineon

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD95,700.00

(不含稅)

TWD100,500.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2027年1月13日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 12000	TWD31.90	TWD95,700.00
15000 +	TWD30.90	TWD92,700.00

* 參考價格

RS庫存編號:: 215-2523
製造零件編號:: IPL60R285P7AUMA1
製造商:: Infineon

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	13A
	Maximum Drain Source Voltage Vds	600V
	Package Type	ThinPAK
	Series	600V CoolMOS CFD7
	Mount Type	Surface
	Pin Count	5
	Maximum Drain Source Resistance Rds	285mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	59W
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	0.9V
	Maximum Operating Temperature	150°C
	Width	1.1 mm
	Length	8.1mm
	Height	8.1mm
	Standards/Approvals	No
	Automotive Standard	No

	選取全部
	品牌 Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 13A
	Maximum Drain Source Voltage Vds 600V
	Package Type ThinPAK
	Series 600V CoolMOS CFD7
	Mount Type Surface
	Pin Count 5
	Maximum Drain Source Resistance Rds 285mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 59W
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 0.9V
	Maximum Operating Temperature 150°C
	Width 1.1 mm
	Length 8.1mm
	Height 8.1mm
	Standards/Approvals No
	Automotive Standard No

Datasheet - IPL60R285P7AUMA1

The Infineon 600V Cool MOS™ P7 is the successor to the 600V Cool MOS™ P6 series. It continues to balance the need for high efficiency against the ease-of-use in the design process. The best-in-class R onxA and the inherently low gate charge (Q G) of the Cool MOS™ 7th generation platform ensure its high efficiency. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Furthermore, extremely low switching and conduction losses make switching application seven more efficient, more compact and much cooler.

Suitable for hard and soft switching (PFC and LLC) due to an outstanding  commutation ruggedness

Excellent ESD robustness >2kV(HBM) for all products

Significant reduction of switching and conduction losses

Wide portfolio in through hole and surface mount packages

Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 13 A, 600 V Enhancement, 5-Pin ThinPAK

訂單超過 $1,300.00 免費送貨

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