Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 14 A, 650 V Enhancement, 5-Pin ThinPAK IPL60R185CFD7AUMA1
- RS庫存編號:
- 215-2522
- 製造零件編號:
- IPL60R185CFD7AUMA1
- 製造商:
- Infineon
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可享批量折扣
小計（1 包，共 5 件）*
TWD416.00
(不含稅)
TWD436.80
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 745 | TWD83.20 | TWD416.00 |
| 750 - 1495 | TWD81.20 | TWD406.00 |
| 1500 + | TWD80.20 | TWD401.00 |
* 參考價格
- RS庫存編號:
- 215-2522
- 製造零件編號:
- IPL60R185CFD7AUMA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 14A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | ThinPAK | |
| Series | 600V CoolMOS CFD7 | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 185mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 85W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 28nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.1 mm | |
| Standards/Approvals | No | |
| Height | 8.1mm | |
| Length | 8.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 14A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type ThinPAK | ||
Series 600V CoolMOS CFD7 | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 185mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 85W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 28nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 1.1 mm | ||
Standards/Approvals No | ||
Height 8.1mm | ||
Length 8.1mm | ||
Automotive Standard No | ||
The Infineon 600V Cool MOS™ CFD7 is latest high voltage super junction MOSFET technology with integrated fast body diode, completing the Cool MOS™ 7 series. Cool MOS™ CFD7 comes with reduced gate charge (Qg), improved turn-off behaviour and a reverse recovery charge (Qrr) of up to 69% lower compared to the competition, as well as the lowest reverse recovery time (trr) in the market.
Ultra-fast body diode
Best-in-class reverse recovery charge (Qrr)
Improved reverse diode dv/dt and dif/dt ruggedness
Lowest FOM RDS(on) x Qg and Eoss
Best-in-class RDS(on)/package combinations
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