Infineon 600V CoolMOS CFD7 Type N-Channel MOSFET, 18 A, 600 V, 3-Pin TO-220
- RS庫存編號:
- 218-3066
- 製造零件編號:
- IPP60R125CFD7XKSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 管，共 50 件）*
TWD2,980.00
(不含稅)
TWD3,129.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 400 件從 2026年1月05日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每管* |
|---|---|---|
| 50 - 50 | TWD59.60 | TWD2,980.00 |
| 100 - 150 | TWD58.40 | TWD2,920.00 |
| 200 + | TWD57.20 | TWD2,860.00 |
* 參考價格
- RS庫存編號:
- 218-3066
- 製造零件編號:
- IPP60R125CFD7XKSA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220 | |
| Series | 600V CoolMOS CFD7 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 125mΩ | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 92W | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 36nC | |
| Length | 10.36mm | |
| Width | 4.57 mm | |
| Height | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220 | ||
Series 600V CoolMOS CFD7 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 125mΩ | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 92W | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 36nC | ||
Length 10.36mm | ||
Width 4.57 mm | ||
Height 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon 600V CoolMOSª CFD7 N-Channel Power MOSFET. The CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon technologies.
Ultra-fast body diode
Low gate charge
Best-in-class reverse recovery charge (Qrr)
Improved MOSFET reverse diode dv/dt and diF/dt ruggedness
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