Infineon 600V CoolMOS P7 Type N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-263 IPB60R280P7ATMA1

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包裝方式:
RS庫存編號:
214-4370
製造零件編號:
IPB60R280P7ATMA1
製造商:
Infineon
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品牌

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

600V

Series

600V CoolMOS P7

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

53W

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

18nC

Maximum Operating Temperature

150°C

Height

4.5mm

Length

10.02mm

Standards/Approvals

No

Automotive Standard

No

Infineon 600V CoolMOS P7 Series MOSFET, 600V Drain Source Voltage, 12A Continuous Drain Current - IPB60R280P7ATMA1


This MOSFET is a high-voltage N-channel enhancement device engineered for power switching in demanding electronic systems. It operates across a wide temperature range and is intended for surface-mounted applications where robust voltage handling and controlled gate drive are required. The component suits designs that require high-voltage blocking, moderate conduction current and compact mounting.

Features and Benefits:


• 600V drain-source rating for high-voltage switching capability
• 12A continuous drain current for sustained load handling
• 280 mΩ Rds(on) for efficient conduction at normal operating conditions
• 18 nC typical gate charge for predictable switching energy
• 53W maximum power dissipation for thermal margin in power stages
• 20V gate tolerance for compatibility with common gate drivers

Applications


• Suitable for offline power supplies and SMPS primary switches
• Ideal for high-voltage DC-DC converters and power modules
• Used with rectifier and snubber networks in power conditioning
• Can be used for industrial motor-drive front-ends
• Used for telecoms power systems requiring space-efficient mounting

What package and mounting approach does it require?


It is supplied in a TO-263 package designed for surface-mount assembly to provide low-profile board integration and efficient board-level thermal conduction.

What thermal limits govern its use in high-temperature environments?


The device is rated to operate between -55 °C and 150 °C, defining allowable ambient and junction conditions for reliable operation within that span.

How does the gate specification influence external driver selection?


With a maximum gate-source voltage of 20V, drivers should keep peak Vgs within this boundary and account for the 18 nC typical gate charge when sizing drive current for the desired switching speed.

What conduction behaviour should designers anticipate under continuous load?


Expect continuous drain currents up to 12 A, with conduction losses influenced by the specified 280 mΩ on-resistance and overall board thermal design.

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