Infineon 600V CoolMOS P7 N-Channel MOSFET, 12 A, 600 V Enhancement, 3-Pin TO-252 IPD60R280P7SAUMA1
- RS庫存編號:
- 218-3050
- 製造零件編號:
- IPD60R280P7SAUMA1
- 製造商:
- Infineon
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查看批量定價選項小計（1 卷，共 2500 件）*
TWD42,500.00
(不含稅)
TWD44,625.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月07日 發貨
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單位 | 每單位 | 每卷* |
|---|---|---|
| 2500 - 10000 | TWD17.00 | TWD42,500.00 |
| 12500 + | TWD16.50 | TWD41,250.00 |
* 參考價格
- RS庫存編號:
- 218-3050
- 製造零件編號:
- IPD60R280P7SAUMA1
- 製造商:
- Infineon
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | 600V CoolMOS P7 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 280mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 900mV | |
| Minimum Operating Temperature | -40°C | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Power Dissipation Pd | 53W | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Width | 6.22mm | |
| Height | 2.41mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series 600V CoolMOS P7 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 280mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 900mV | ||
Minimum Operating Temperature -40°C | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Power Dissipation Pd 53W | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Width 6.22mm | ||
Height 2.41mm | ||
Automotive Standard No | ||
Infineon 600V CoolMOS P7 Series MOSFET, 600V Maximum Drain Source Voltage, 12A Maximum Continuous Drain Current - IPD60R280P7SAUMA1
This MOSFET is a high-voltage N-channel switching device designed for surface-mount power applications where robust voltage handling and elevated operating temperatures are required. It functions as an enhancement-mode transistor suitable for switching and power conversion tasks, offering controlled gate-driven conduction and support for continuous drain currents typical in industrial and power-electronics environments.
Features and Benefits:
• 600 V maximum drain-source voltage enables high-voltage switching
• 12 A continuous drain current supports significant load currents
• 280 mΩ maximum RDS(on) reduces conduction losses under load
• 53 W maximum power dissipation maintains thermal margin in operation
• 18 nC typical gate charge at VGS permits fast switching transitions
• −40 °C to 150 °C operating range allows high-temperature deployment
• 12 A continuous drain current supports significant load currents
• 280 mΩ maximum RDS(on) reduces conduction losses under load
• 53 W maximum power dissipation maintains thermal margin in operation
• 18 nC typical gate charge at VGS permits fast switching transitions
• −40 °C to 150 °C operating range allows high-temperature deployment
Applications
• Suitable for high-voltage power supplies and converters
• Ideal for switch-mode power supply primary switches
• Used with motor drives requiring 600 V rated devices
• Can be used for industrial power-switching modules
• Suitable for Compact surface-mount power assemblies
• Ideal for switch-mode power supply primary switches
• Used with motor drives requiring 600 V rated devices
• Can be used for industrial power-switching modules
• Suitable for Compact surface-mount power assemblies
What gate voltage limits must be observed for safe operation?
The device must not exceed a gate-source voltage of 20 V to avoid gate overstress.
How does the package format affect mounting and the thermal path?
The TO-252 surface-mount package provides a Compact footprint and a direct thermal path through the tab for PCB heat-sinking arrangements.
What type of conduction mode does it employ and what does that imply?
It operates in enhancement mode as an N-channel device, so it requires a positive gate drive relative to the source to turn on.
What is the typical gate-charge behaviour relevant for drive design?
The typical gate charge of 18 nC at VGS indicates the gate driver must supply that charge per switching event, influencing driver sizing and switching losses.
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