STMicroelectronics SCTWA40N120G2V-4 Type N-Channel MOSFET, 45 A, 1200 V, 3-Pin Hip-247
- RS庫存編號:
- 212-2093
- 製造零件編號:
- SCTWA40N120G2V-4
- 製造商:
- STMicroelectronics
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- RS庫存編號:
- 212-2093
- 製造零件編號:
- SCTWA40N120G2V-4
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | SCTWA40N120G2V-4 | |
| Package Type | Hip-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 70mΩ | |
| Forward Voltage Vf | 3.3V | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 277W | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Maximum Operating Temperature | 200°C | |
| Standards/Approvals | No | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series SCTWA40N120G2V-4 | ||
Package Type Hip-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 70mΩ | ||
Forward Voltage Vf 3.3V | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 277W | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Maximum Operating Temperature 200°C | ||
Standards/Approvals No | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Height 5.1mm | ||
Automotive Standard No | ||
SiC MOSFET
The STMicroelectronics 650 V, 55 mΩ SCTH35N65G2V-7 STPOWER SiC MOSFET with a trench field-stop (TFS) IGBT of the same voltage rating and equivalent on-state resistance. The STPOWER SiC MOSFET exhibits significantly reduced switching losses, even at high temperatures. This enables designer to operate at very high switching frequencies, reducing the size of passive components for smaller form factors.
Very low switching losses
Low power losses at high temperatures
Higher operating temperature (up to 200 ˚C)
Body diode with no recovery losses
Easy to drive
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