onsemi NTH Type N-Channel MOSFET & Diode, 31 A, 1200 V Enhancement, 3-Pin TO-247 NTHL080N120SC1A
- RS庫存編號:
- 205-2502
- 製造零件編號:
- NTHL080N120SC1A
- 製造商:
- onsemi
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小計（1 件）*
TWD297.00
(不含稅)
TWD311.85
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 384 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 112 | TWD297.00 |
| 113 - 224 | TWD290.00 |
| 225 + | TWD285.00 |
* 參考價格
- RS庫存編號:
- 205-2502
- 製造零件編號:
- NTHL080N120SC1A
- 製造商:
- onsemi
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Product Type | MOSFET & Diode | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 178W | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Forward Voltage Vf | 4V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 4.48mm | |
| Width | 15.37 mm | |
| Standards/Approvals | RoHS | |
| Length | 39.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Product Type MOSFET & Diode | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 178W | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Forward Voltage Vf 4V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Height 4.48mm | ||
Width 15.37 mm | ||
Standards/Approvals RoHS | ||
Length 39.75mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
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