onsemi NTH Type N-Channel MOSFET & Diode, 31 A, 1200 V Enhancement, 3-Pin TO-247
- RS庫存編號:
- 205-2501
- 製造零件編號:
- NTHL080N120SC1A
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
暫時無法供應
我們無法確定此產品何時有貨，RS 預計將其從我們的產品目錄中移除。
- RS庫存編號:
- 205-2501
- 製造零件編號:
- NTHL080N120SC1A
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 31A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | TO-247 | |
| Series | NTH | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 110mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 56nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 178W | |
| Forward Voltage Vf | 4V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 15.37 mm | |
| Height | 4.48mm | |
| Length | 39.75mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 31A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type TO-247 | ||
Series NTH | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 110mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 56nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 178W | ||
Forward Voltage Vf 4V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 15.37 mm | ||
Height 4.48mm | ||
Length 39.75mm | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L Silicon Carbide (SiC) MOSFET - EliteSiC, 80 mohm, 1200 V, M1, TO-247-3L
The ON Semiconductor NTH series SiC N-channel 1200V MOSFET uses a completely new technology that provide superior switching performance and higher reliability compared to Silicon. In addition, the low ON resistance and compact chip size ensure low capacitance and gate charge. Consequently, system benefits include highest efficiency, faster operation frequency, increased power density, reduced EMI, and reduced system size.
Continuous Drain Current rating is 31A
Drain to source on resistance rating is 110mohm
High speed switching and low capacitance
100% UIL tested
Low effective output capacitance
Package type is TO-247-3LD
相關連結
- onsemi NTH Type N-Channel MOSFET & Diode 1200 V Enhancement, 3-Pin TO-247 NTHL080N120SC1A
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247