STMicroelectronics M6 Type N-Channel MOSFET, 12 A, 600 V, 3-Pin TO-252 STD16N60M6
- RS庫存編號:
- 203-3431
- 製造零件編號:
- STD16N60M6
- 製造商:
- STMicroelectronics
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TWD386.00
(不含稅)
TWD405.30
(含稅)
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最後的 RS 庫存
- 最終 2,485 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD77.20 | TWD386.00 |
| 625 - 1245 | TWD75.00 | TWD375.00 |
| 1250 + | TWD74.00 | TWD370.00 |
* 參考價格
- RS庫存編號:
- 203-3431
- 製造零件編號:
- STD16N60M6
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 12A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | M6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 320mΩ | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 110W | |
| Typical Gate Charge Qg @ Vgs | 16.7nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Length | 6.6mm | |
| Width | 2.4 mm | |
| Height | 10.1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 12A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series M6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 320mΩ | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 110W | ||
Typical Gate Charge Qg @ Vgs 16.7nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Length 6.6mm | ||
Width 2.4 mm | ||
Height 10.1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected
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