製造零件編號

STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252

RS庫存編號:: 212-2104
製造零件編號:: STD11N60M6
製造商:: STMicroelectronics

STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 2500 件）*

TWD80,750.00

(不含稅)

TWD84,800.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

從 2026年5月19日發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
2500 - 2500	TWD32.30	TWD80,750.00
5000 +	TWD31.30	TWD78,250.00

* 參考價格

RS庫存編號:: 212-2104
製造零件編號:: STD11N60M6
製造商:: STMicroelectronics

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	STMicroelectronics
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	8A
	Maximum Drain Source Voltage Vds	600V
	Package Type	TO-252
	Series	STD11N60M6
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	500mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	10.3nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	90W
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	1.6V
	Maximum Operating Temperature	150°C
	Height	2.4mm
	Standards/Approvals	No
	Width	6.2 mm
	Length	6.6mm
	Automotive Standard	No

	選取全部
	品牌 STMicroelectronics
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 8A
	Maximum Drain Source Voltage Vds 600V
	Package Type TO-252
	Series STD11N60M6
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 500mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 10.3nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 90W
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 1.6V
	Maximum Operating Temperature 150°C
	Height 2.4mm
	Standards/Approvals No
	Width 6.2 mm
	Length 6.6mm
	Automotive Standard No

DataSheet - STD11N60M6

MDMesh M6 MOSFET N-CH

The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.

Reduced switching losses

Lower RDS(on) per area vs previous generation

Low gate input resistance

100% avalanche tested

Zener-protected

STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252

訂單超過 $1,300.00 免費送貨

MDMesh M6 MOSFET N-CH

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