STMicroelectronics STD11N60M6 Type N-Channel MOSFET, 8 A, 600 V Enhancement, 3-Pin TO-252 STD11N60M6
- RS庫存編號:
- 212-2105
- 製造零件編號:
- STD11N60M6
- 製造商:
- STMicroelectronics
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TWD365.00
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TWD383.20
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 10 - 620 | TWD36.50 | TWD365.00 |
| 630 - 1240 | TWD35.60 | TWD356.00 |
| 1250 + | TWD35.00 | TWD350.00 |
* 參考價格
- RS庫存編號:
- 212-2105
- 製造零件編號:
- STD11N60M6
- 製造商:
- STMicroelectronics
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 8A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | STD11N60M6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 500mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 90W | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Forward Voltage Vf | 1.6V | |
| Typical Gate Charge Qg @ Vgs | 10.3nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.6mm | |
| Width | 6.2 mm | |
| Standards/Approvals | No | |
| Height | 2.4mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 8A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series STD11N60M6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 500mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 90W | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Forward Voltage Vf 1.6V | ||
Typical Gate Charge Qg @ Vgs 10.3nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.6mm | ||
Width 6.2 mm | ||
Standards/Approvals No | ||
Height 2.4mm | ||
Automotive Standard No | ||
MDMesh M6 MOSFET N-CH
The STMicroelectronics MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. It builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Lower RDS(on) per area vs previous generation
Low gate input resistance
100% avalanche tested
Zener-protected
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