STMicroelectronics M6 Type N-Channel MOSFET, 13 A, 600 V, 3-Pin TO-252 STD18N60M6
- RS庫存編號:
- 203-3433
- 製造零件編號:
- STD18N60M6
- 製造商:
- STMicroelectronics
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可享批量折扣
小計（1 包，共 5 件）*
TWD261.00
(不含稅)
TWD274.05
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月21日 發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 620 | TWD52.20 | TWD261.00 |
| 625 - 1245 | TWD51.00 | TWD255.00 |
| 1250 + | TWD50.00 | TWD250.00 |
* 參考價格
- RS庫存編號:
- 203-3433
- 製造零件編號:
- STD18N60M6
- 製造商:
- STMicroelectronics
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | STMicroelectronics | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 13A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-252 | |
| Series | M6 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 110W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Height | 10.1mm | |
| Length | 6.6mm | |
| Width | 2.4 mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 STMicroelectronics | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 13A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-252 | ||
Series M6 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 110W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Height 10.1mm | ||
Length 6.6mm | ||
Width 2.4 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The STMicroelectronics N-channel MDmesh M6 Power MOSFET incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. Previous generation of MDmesh devices through its new M6 technology, is built by STMicroelectronics. This combines excellent RDS(on) per area improvement with one of the most effective switching behaviours available, as well as a user-friendly experience for maximum end-application efficiency.
Reduced switching losses
Low gate input resistance
100% avalanche tested
Zener-protected
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