onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247 NTH4L020N120SC1
- RS庫存編號:
- 202-5697
- 製造零件編號:
- NTH4L020N120SC1
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 件）*
TWD900.00
(不含稅)
TWD945.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 174 個，準備發貨
單位 | 每單位 |
|---|---|
| 1 - 112 | TWD900.00 |
| 113 - 224 | TWD873.00 |
| 225 + | TWD847.00 |
* 參考價格
- RS庫存編號:
- 202-5697
- 製造零件編號:
- NTH4L020N120SC1
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 84A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Series | NTH | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 28mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Power Dissipation Pd | 510W | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Forward Voltage Vf | 3.7V | |
| Maximum Operating Temperature | 175°C | |
| Length | 18.62mm | |
| Height | 15.2mm | |
| Width | 5.2 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 84A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Series NTH | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 28mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Power Dissipation Pd 510W | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Forward Voltage Vf 3.7V | ||
Maximum Operating Temperature 175°C | ||
Length 18.62mm | ||
Height 15.2mm | ||
Width 5.2 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L
The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.
20mO drain to source on resistance
Ultra low gate charge
100% avalanche tested
Pb free
RoHS compliant
相關連結
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 4-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 7-Pin TO-247
- onsemi NTH Type N-Channel MOSFET 1200 V Enhancement, 3-Pin TO-247