onsemi NTH Type N-Channel MOSFET, 84 A, 1200 V Enhancement, 4-Pin TO-247

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RS庫存編號:
202-5696
製造零件編號:
NTH4L020N120SC1
製造商:
onsemi
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品牌

onsemi

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

84A

Maximum Drain Source Voltage Vds

1200V

Series

NTH

Package Type

TO-247

Mount Type

Through Hole

Pin Count

4

Maximum Drain Source Resistance Rds

28mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

510W

Forward Voltage Vf

3.7V

Maximum Gate Source Voltage Vgs

25 V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

220nC

Maximum Operating Temperature

175°C

Width

5.2 mm

Height

15.2mm

Standards/Approvals

No

Length

18.62mm

Automotive Standard

No

Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 20 mohm, 1200 V, M1, TO-247-4L


The ON Semiconductor Silicon Carbide Power MOSFET runs with 102 Ampere and 1200 Volts. It can be used in uninterruptible power supply, DC or DC converter, Boost inverter.

20mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant