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選取全部	屬性	值
	品牌	onsemi
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	58A
	Maximum Drain Source Voltage Vds	1200V
	Package Type	TO-247
	Series	NTH
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	56mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	106nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	319W
	Maximum Gate Source Voltage Vgs	25 V
	Forward Voltage Vf	3.7V
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Height	22.74mm
	Width	5.2 mm
	Length	15.8mm
	Automotive Standard	No

	選取全部
	品牌 onsemi
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 58A
	Maximum Drain Source Voltage Vds 1200V
	Package Type TO-247
	Series NTH
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 56mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 106nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 319W
	Maximum Gate Source Voltage Vgs 25 V
	Forward Voltage Vf 3.7V
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Height 22.74mm
	Width 5.2 mm
	Length 15.8mm
	Automotive Standard No

Datasheet - NTH4L040N120SC1

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

The ON Semiconductor Silicon Carbide Power MOSFET runs with 29 Ampere and 1200 Volts. It can be used in uninterruptible power supply, Boost inverter, Industrial Motor Drive, PV Charger.

40mO drain to source on resistance

Ultra low gate charge

100% avalanche tested

Pb free

RoHS compliant

onsemi NTH Type N-Channel MOSFET, 58 A, 1200 V Enhancement, 4-Pin TO-247

Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L Silicon Carbide (SiC) MOSFET - EliteSiC, 40 mohm, 1200 V, M1, TO-247-4L

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