Vishay Single 1 Type N-Channel Power MOSFET, 5 A, 500 V, 3-Pin
- RS庫存編號:
- 180-8670
- 製造零件編號:
- IRF830ALPBF
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD226.00
(不含稅)
TWD237.30
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 455 件從 2026年1月21日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD45.20 | TWD226.00 |
| 15 - 20 | TWD43.80 | TWD219.00 |
| 25 + | TWD43.20 | TWD216.00 |
* 參考價格
- RS庫存編號:
- 180-8670
- 製造零件編號:
- IRF830ALPBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 5A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.4Ω | |
| Forward Voltage Vf | 1.5V | |
| Maximum Power Dissipation Pd | 74W | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 24nC | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Single | |
| Length | 9.65mm | |
| Height | 4.83mm | |
| Width | 10.67 mm | |
| Standards/Approvals | RoHS 2002/95/EC, IEC 61249-2-21 | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 5A | ||
Maximum Drain Source Voltage Vds 500V | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.4Ω | ||
Forward Voltage Vf 1.5V | ||
Maximum Power Dissipation Pd 74W | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 24nC | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Single | ||
Length 9.65mm | ||
Height 4.83mm | ||
Width 10.67 mm | ||
Standards/Approvals RoHS 2002/95/EC, IEC 61249-2-21 | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-263-3 package is a new age product with a drain-source voltage of 500V and maximum gate-source voltage of 30V. It has a drain-source resistance of 1.4mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 74W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Fully characterized capacitance and avalanche voltage and current
• Halogen free
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
• TrenchFET power MOSFET
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
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