Vishay Single 1 Type N-Channel Power MOSFET, 6.2 A, 600 V, 3-Pin TO-220AB
- RS庫存編號:
- 180-8656
- 製造零件編號:
- IRFBC40APBF
- 製造商:
- Vishay
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TWD271.00
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TWD284.55
(含稅)
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單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 10 | TWD54.20 | TWD271.00 |
| 15 - 20 | TWD53.00 | TWD265.00 |
| 25 + | TWD52.20 | TWD261.00 |
* 參考價格
- RS庫存編號:
- 180-8656
- 製造零件編號:
- IRFBC40APBF
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 6.2A | |
| Maximum Drain Source Voltage Vds | 600V | |
| Package Type | TO-220AB | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.2Ω | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 42nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Transistor Configuration | Single | |
| Maximum Operating Temperature | 150°C | |
| Length | 14.4mm | |
| Standards/Approvals | RoHS | |
| Height | 6.71mm | |
| Width | 10.52 mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 6.2A | ||
Maximum Drain Source Voltage Vds 600V | ||
Package Type TO-220AB | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.2Ω | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 42nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Transistor Configuration Single | ||
Maximum Operating Temperature 150°C | ||
Length 14.4mm | ||
Standards/Approvals RoHS | ||
Height 6.71mm | ||
Width 10.52 mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is an N-channel, TO-220-3 package is a new age product with a drain-source voltage of 600V and maximum gate-source voltage of 30V. It has a drain-source resistance of 1.20mohm at a gate-source voltage of 10V. The MOSFET has a maximum power dissipation of 125W. The product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Effective coss specified
• Fully characterized capacitance and avalanche voltage and current
• Improved gate, avalanche and dynamic dV/dt
• Lead (Pb) free component
• Low gate charge Qg results in simple drive requirement
• Operating temperature ranges between -55°C and 150°C
Applications
• High speed power switching
• Switch mode power supply (SMPS)
• Uninterruptible power supplies
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