Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

RS庫存編號:: 180-7886
製造零件編號:: SI7956DP-T1-GE3
製造商:: Vishay

Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 5 件）*

TWD554.00

(不含稅)

TWD581.70

訂單超過 $1,300.00 免費送貨

有庫存

加上 3,000 件從 2026年1月20日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
5 - 745	TWD110.80	TWD554.00
750 - 1495	TWD108.00	TWD540.00
1500 +	TWD106.40	TWD532.00

* 參考價格

RS庫存編號:: 180-7886
製造零件編號:: SI7956DP-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	4.1A
	Maximum Drain Source Voltage Vds	150V
	Package Type	PowerPack
	Series	SI7956DP
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	0.1Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	3.5W
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	17nC
	Minimum Operating Temperature	-50°C
	Forward Voltage Vf	1.2V
	Transistor Configuration	Dual
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	6.25mm
	Width	5.26 mm
	Height	1.12mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 4.1A
	Maximum Drain Source Voltage Vds 150V
	Package Type PowerPack
	Series SI7956DP
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 0.1Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 3.5W
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 17nC
	Minimum Operating Temperature -50°C
	Forward Voltage Vf 1.2V
	Transistor Configuration Dual
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 6.25mm
	Width 5.26 mm
	Height 1.12mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel PowerPAK-SO-8 MOSFET is a new age product with a drain-source voltage of 150V and a maximum gate-source voltage of 20V. It has a drain-source resistance of 105mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 3.5W and continuous drain current of 4.1A. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Dual MOSFET for space savings

• Halogen free

• Lead (Pb) free component

• Low on-resistance in new low thermal resistance PowerPAK package

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Half bridge and forward converters

• High efficiency primary side switches

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested