Vishay Dual SI7997DP Type N-Channel MOSFET, -60 A, -30 V Enhancement, 8-Pin PowerPack
- RS庫存編號:
- 180-7325
- 製造零件編號:
- SI7997DP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD119,400.00
(不含稅)
TWD125,370.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 3,000 個，準備發貨
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD39.80 | TWD119,400.00 |
| 15000 + | TWD38.60 | TWD115,800.00 |
* 參考價格
- RS庫存編號:
- 180-7325
- 製造零件編號:
- SI7997DP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | -60A | |
| Maximum Drain Source Voltage Vds | -30V | |
| Package Type | PowerPack | |
| Series | SI7997DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 51nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 29W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | -1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.12mm | |
| Standards/Approvals | No | |
| Width | 5.26 mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id -60A | ||
Maximum Drain Source Voltage Vds -30V | ||
Package Type PowerPack | ||
Series SI7997DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 51nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 29W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf -1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.12mm | ||
Standards/Approvals No | ||
Width 5.26 mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay MOSFET is a P-channel, PowerPAK-SO-8 package is a new age product with a drain-source voltage of 30V and maximum gate-source voltage of 20V. It has a drain-source resistance of 5.5mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 46W. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen and lead (Pb) free component
• Operating temperature ranges between -55°C and 150°C
• PWM optimised
• TrenchFET power MOSFET
Applications
• Adaptor switches
• Battery management
• Load switches
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