Vishay Dual SI7216DN Type N-Channel MOSFET, 6.5 A, 40 V Enhancement, 8-Pin PowerPack
- RS庫存編號:
- 180-7312
- 製造零件編號:
- SI7216DN-T1-E3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD85,800.00
(不含稅)
TWD90,090.00
(含稅)
庫存資訊目前無法存取 - 請稍後再回來查看
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD28.60 | TWD85,800.00 |
| 6000 + | TWD27.70 | TWD83,100.00 |
* 參考價格
- RS庫存編號:
- 180-7312
- 製造零件編號:
- SI7216DN-T1-E3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 6.5A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | SI7216DN | |
| Package Type | PowerPack | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 25mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.5nC | |
| Maximum Power Dissipation Pd | 20.8W | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1.2V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 3.4mm | |
| Height | 1.12mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 6.5A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series SI7216DN | ||
Package Type PowerPack | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 25mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.5nC | ||
Maximum Power Dissipation Pd 20.8W | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1.2V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 3.4mm | ||
Height 1.12mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay SI7216DN is a dual N-channel MOSFET having drain to source(Vds) voltage of 40V.The gate to source voltage(VGS) is 20V. It is having power PAK 1212-8 package. It offers drain to source resistance (RDS.) 0.032ohms at 10VGS and 0.039ohms at 4.5VGS. Maximum drain current 6A.
Trench FET power MOSFET
Low thermal resistance Power PAK package with small size and low 1.07 mm profile
100 % Rg and UIS tested
Compliant to RoHS directive 2002/95/EC
相關連結
- Vishay Dual SI7216DN Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- Vishay Dual SIA931DJ Type P-Channel MOSFET -30 V Enhancement, 6-Pin PowerPack
- Vishay Dual SIA931DJ Type P-Channel MOSFET -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3
- ROHM HT8KE5H Dual N-Channel MOSFET 100 V Enhancement, 8-Pin HSOP-8 HT8KE5HTB1