Vishay Dual SI7956DP Type N-Channel MOSFET, 4.1 A, 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- RS庫存編號:
- 180-7324
- 製造零件編號:
- SI7956DP-T1-GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD202,500.00
(不含稅)
TWD212,640.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月14日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD67.50 | TWD202,500.00 |
| 6000 + | TWD65.40 | TWD196,200.00 |
* 參考價格
- RS庫存編號:
- 180-7324
- 製造零件編號:
- SI7956DP-T1-GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 4.1A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPack | |
| Series | SI7956DP | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.1Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 3.5W | |
| Typical Gate Charge Qg @ Vgs | 17nC | |
| Minimum Operating Temperature | -50°C | |
| Forward Voltage Vf | 1.2V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | No | |
| Height | 1.12mm | |
| Length | 6.25mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 4.1A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPack | ||
Series SI7956DP | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.1Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 3.5W | ||
Typical Gate Charge Qg @ Vgs 17nC | ||
Minimum Operating Temperature -50°C | ||
Forward Voltage Vf 1.2V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals No | ||
Height 1.12mm | ||
Length 6.25mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Vishay SI7956DP Series MOSFET, 150V Maximum Drain Source Voltage, 4.1A Maximum Continuous Drain Current - SI7956DP-T1-GE3
This MOSFET is a dual N-channel transistor in a surface-mount PowerPack package designed for high-voltage switching and control tasks. It operates as an enhancement-mode device intended for use where compact, board-mounted power switching is required. The component supports moderate continuous currents and is suitable for applications that demand resilience across a wide ambient temperature range.
Features and Benefits:
• 150V drain-source rating enables high-voltage switching capability
• 0.1Ω maximum Rds(on) reduces conduction losses during operation
• 4.1A continuous drain current supports sustained load currents
• 17nC typical gate charge yields predictable switching energy
• 3.5W maximum power dissipation manages thermal load in circuits
• -50°C to 150°C operating range sustains performance in extremes
• 0.1Ω maximum Rds(on) reduces conduction losses during operation
• 4.1A continuous drain current supports sustained load currents
• 17nC typical gate charge yields predictable switching energy
• 3.5W maximum power dissipation manages thermal load in circuits
• -50°C to 150°C operating range sustains performance in extremes
Applications
• Suitable for motor driver half-bridge stages on compact boards
• Ideal for high-voltage power switching in industrial control
• Used for DC-DC converter phases requiring dual transistors
• Can be used for low-side switching in battery management systems
• Used with gate drivers where moderate gate charge is acceptable
• Ideal for high-voltage power switching in industrial control
• Used for DC-DC converter phases requiring dual transistors
• Can be used for low-side switching in battery management systems
• Used with gate drivers where moderate gate charge is acceptable
What pin count and package type does it use for PCB layout?
It is supplied in an 8-pin PowerPack surface-mount package suitable for dense board layouts and thermal conduction through the package body.
How does the device behave thermally under load?
The device has a 3.5W maximum power dissipation rating and can operate up to 150°C, so thermal management such as copper area or heatsinking should be sized to keep junction temperatures within limits.
What gate voltage limitations must be observed during drive design?
The maximum gate-to-source voltage is 20V, so gate-drive circuits should stay within this threshold to avoid device damage.
Are there any constraints on transistor configuration for circuit design?
The component contains two N-channel transistors in a dual configuration, allowing complementary switching arrangements or parallel operation depending on the schematic.
相關連結
- Vishay Dual SI7956DP Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPack SI7956DP-T1-GE3
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack
- Vishay Dual SIA931DJ Type P-Channel MOSFET -30 V Enhancement, 6-Pin PowerPack
- Vishay Dual SI7997DP Type N-Channel MOSFET -30 V Enhancement, 8-Pin PowerPack SI7997DP-T1-GE3
- Vishay Dual SIA931DJ Type P-Channel MOSFET -30 V Enhancement, 6-Pin PowerPack SIA931DJ-T1-GE3
- Vishay Dual SI7216DN Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack
- Vishay Dual SI7216DN Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPack SI7216DN-T1-E3
- Vishay Dual TrenchFET 2 Type P 4 A 8-Pin PowerPAK 1212-8 Dual