Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3

RS庫存編號:: 178-3853
製造零件編號:: Si2319DDS-T1-GE3
製造商:: Vishay Siliconix

Vishay Siliconix TrenchFET Type P-Channel MOSFET, 3.6 A, 40 V Enhancement, 3-Pin SOT-23 Si2319DDS-T1-GE3

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可享批量折扣

小計（1 包，共 50 件）*

TWD580.00

(不含稅)

TWD609.00

訂單超過 $1,300.00 免費送貨

最後的 RS 庫存

最終 4,900 個，準備發貨

單位	每單位	每包*
50 - 700	TWD11.60	TWD580.00
750 - 1450	TWD11.40	TWD570.00
1500 +	TWD11.30	TWD565.00

* 參考價格

RS庫存編號:: 178-3853
製造零件編號:: Si2319DDS-T1-GE3
製造商:: Vishay Siliconix

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

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選取全部	屬性	值
	品牌	Vishay Siliconix
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	-1.2V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	1.7W
	Typical Gate Charge Qg @ Vgs	12.5nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.4 mm
	Height	1.02mm
	Standards/Approvals	No
	Length	3.04mm
	Automotive Standard	No

	選取全部
	品牌 Vishay Siliconix
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Forward Voltage Vf -1.2V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 1.7W
	Typical Gate Charge Qg @ Vgs 12.5nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.4 mm
	Height 1.02mm
	Standards/Approvals No
	Length 3.04mm
	Automotive Standard No

Datasheet

豁免

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 40V and a maximum gate-source voltage of 20V. It has drain-source resistance of 75mohms at a gate-source voltage of 10V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this MOSFET is 4.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• Battery switch

• Load switch

• Motor drive control

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• Rg tested

• UIS tested