Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

RS庫存編號:: 180-7944
製造零件編號:: SI2300DS-T1-GE3
製造商:: Vishay

Vishay TrenchFET Type N-Channel MOSFET, 3.6 A, 30 V Enhancement, 3-Pin SOT-23 SI2300DS-T1-GE3

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 25 件）*

TWD165.00

(不含稅)

TWD173.25

訂單超過 $1,300.00 免費送貨

暫時缺貨

4,675 件準備從其他地點送貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
25 - 725	TWD6.60	TWD165.00
750 - 1475	TWD6.40	TWD160.00
1500 +	TWD6.20	TWD155.00

* 參考價格

RS庫存編號:: 180-7944
製造零件編號:: SI2300DS-T1-GE3
製造商:: Vishay

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Vishay
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	3.6A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-23
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	68mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	3nC
	Forward Voltage Vf	1.2V
	Maximum Power Dissipation Pd	1.1W
	Maximum Operating Temperature	150°C
	Height	1.12mm
	Standards/Approvals	No
	Length	3.04mm
	Width	2.64 mm
	Automotive Standard	No

	選取全部
	品牌 Vishay
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 3.6A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-23
	Series TrenchFET
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 68mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 3nC
	Forward Voltage Vf 1.2V
	Maximum Power Dissipation Pd 1.1W
	Maximum Operating Temperature 150°C
	Height 1.12mm
	Standards/Approvals No
	Length 3.04mm
	Width 2.64 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount N-channel MOSFET is a new age product with a drain-source voltage of 30V and a maximum gate-source voltage of 12V. It has drain-source resistance of 68mohm at a gate-source voltage of 4.5V. It has a maximum power dissipation of 1.7W and continuous drain current of 3.6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 4.5V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converter for portable devices

• Load switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested