Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 60 V Enhancement, 8-Pin PowerPAK 1212
- RS庫存編號:
- 178-3727
- 製造零件編號:
- SQS966ENW-T1_GE3
- 製造商:
- Vishay Siliconix
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD36,600.00
(不含稅)
TWD38,430.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年7月30日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD12.20 | TWD36,600.00 |
| 6000 + | TWD11.80 | TWD35,400.00 |
* 參考價格
- RS庫存編號:
- 178-3727
- 製造零件編號:
- SQS966ENW-T1_GE3
- 製造商:
- Vishay Siliconix
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay Siliconix | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 6A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | TrenchFET | |
| Package Type | PowerPAK 1212 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 60mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 12.1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 27.8W | |
| Forward Voltage Vf | 0.82V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Transistor Configuration | Dual | |
| Width | 3.15 mm | |
| Standards/Approvals | No | |
| Length | 3.15mm | |
| Height | 1.07mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay Siliconix | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 6A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series TrenchFET | ||
Package Type PowerPAK 1212 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 60mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 12.1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 27.8W | ||
Forward Voltage Vf 0.82V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Operating Temperature 175°C | ||
Transistor Configuration Dual | ||
Width 3.15 mm | ||
Standards/Approvals No | ||
Length 3.15mm | ||
Height 1.07mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard AEC-Q101 | ||
豁免
- COO (Country of Origin):
- CN
TrenchFET® power MOSFET
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