Vishay SQSA70CENW Type N-Channel MOSFET, 18 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8W SQSA70CENW-T1_GE3
- RS庫存編號:
- 228-2971
- 製造零件編號:
- SQSA70CENW-T1_GE3
- 製造商:
- Vishay
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD50,700.00
(不含稅)
TWD53,220.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2027年1月18日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD16.90 | TWD50,700.00 |
| 15000 + | TWD16.40 | TWD49,200.00 |
* 參考價格
- RS庫存編號:
- 228-2971
- 製造零件編號:
- SQSA70CENW-T1_GE3
- 製造商:
- Vishay
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK 1212-8W | |
| Series | SQSA70CENW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 68.5mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Operating Temperature | 175°C | |
| Length | 3.3mm | |
| Standards/Approvals | RoHS | |
| Height | 3.3mm | |
| Width | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK 1212-8W | ||
Series SQSA70CENW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 68.5mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 0.85V | ||
Maximum Operating Temperature 175°C | ||
Length 3.3mm | ||
Standards/Approvals RoHS | ||
Height 3.3mm | ||
Width 3.3mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQSA70CENW Series MOSFET, 150V Drain Source Voltage, 18A Continuous Drain Current - SQSA70CENW-T1_GE3
This MOSFET is a power-switching transistor designed for high-voltage, high-current applications in PCB-mounted systems. It operates as an N-channel enhancement device suitable for switching and power-management roles across a broad temperature span, and is presented in a compact SMD package for tight board layouts.
Features and Benefits:
• 150V drain capability enables high-voltage switching
• 18A continuous drain current supports heavy loads
• 68.5 mΩ RDS(on) minimises conduction losses
• 8 nC typical gate charge allows fast switching transitions
• 62.5W maximum power dissipation handles thermal stress
• 20V gate-source tolerance permits wide drive margins
• 18A continuous drain current supports heavy loads
• 68.5 mΩ RDS(on) minimises conduction losses
• 8 nC typical gate charge allows fast switching transitions
• 62.5W maximum power dissipation handles thermal stress
• 20V gate-source tolerance permits wide drive margins
Applications
• Suitable for automotive power-conversion modules
• Ideal for DC-DC converters in industrial equipment
• Used with motor drivers requiring high current handling
• Can be used for synchronous rectification in power supplies
• Suitable for battery management and charging circuits
• Ideal for DC-DC converters in industrial equipment
• Used with motor drivers requiring high current handling
• Can be used for synchronous rectification in power supplies
• Suitable for battery management and charging circuits
What temperature range can it reliably operate in?
It functions across a wide band from -55 °C up to 175 °C, making it appropriate for elevated-temperature environments.
What package type and mounting method does it use?
The device comes in a PowerPAK 1212-8W SMD package designed for PCB mounting to aid compact assembly.
How does the gate charge affect switching performance?
A typical gate charge of 8 nC reduces gate-drive energy and contributes to quicker turn-on and turn-off in switching topologies.
Is it suitable for automotive-grade deployments?
It meets AEC-Q101 requirements for use in automotive electronic systems where component qualification is necessary.
相關連結
- Vishay TrenchFET Type N-Channel MOSFET 150 V Enhancement, 8-Pin PowerPAK 1212 SQSA70CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212
- Vishay TrenchFET Type N-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212 SQS486CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 100 V Enhancement, 8-Pin PowerPAK 1212 SQSA12CENW-T1_GE3
- Vishay TrenchFET Type N-Channel MOSFET 60 V Enhancement, 8-Pin PowerPAK 1212 SQS414CENW-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ENW-T1_GE3
- Vishay TrenchFET N channel-Channel MOSFET 40 V Enhancement, 8-Pin PowerPAK 1212-8SLW SQS136ELNW-T1_GE3