Vishay SQSA70CENW Type N-Channel MOSFET, 18 A, 150 V Enhancement, 8-Pin PowerPAK 1212-8W
- RS庫存編號:
- 228-2971
- 製造零件編號:
- SQSA70CENW-T1_GE3
- 製造商:
- Vishay
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可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD43,800.00
(不含稅)
TWD45,990.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 從 2026年12月07日 發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD14.60 | TWD43,800.00 |
| 15000 + | TWD14.10 | TWD42,300.00 |
* 參考價格
- RS庫存編號:
- 228-2971
- 製造零件編號:
- SQSA70CENW-T1_GE3
- 製造商:
- Vishay
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Vishay | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | PowerPAK 1212-8W | |
| Series | SQSA70CENW | |
| Mount Type | PCB | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 68.5mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 8nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 62.5W | |
| Forward Voltage Vf | 0.85V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 3.3mm | |
| Height | 3.3mm | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Vishay | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type PowerPAK 1212-8W | ||
Series SQSA70CENW | ||
Mount Type PCB | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 68.5mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 8nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 62.5W | ||
Forward Voltage Vf 0.85V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 3.3mm | ||
Height 3.3mm | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
Vishay SQSA70CENW Series MOSFET, 150V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - SQSA70CENW-T1_GE3
This MOSFET is a high-voltage, N-channel power device designed for PCB mounting in demanding automotive and industrial control environments. It supports switching and load-control roles where elevated drain-source voltage capability and modest gate charge are required, and is built to meet automotive stress expectations and surface-mount assembly needs.
Features and Benefits:
• 150V drain-source rating enables high-voltage switching capacity • 18A continuous drain current supports substantial load handling • 68.5mΩ Rds(on) minimises conduction losses during operation • 8nC typical gate charge reduces switching energy and drive requirements • 62.5W power dissipation allows for significant thermal loading • 175°C maximum operating temperature permits elevated ambient use
Applications
• Suitable for automotive power distribution modules requiring AEC‑Q101 qualification • Ideal for DC-DC converters in industrial automation systems • Used for motor-control switching in Compact electronics assemblies • Can be used for battery management and power-path control circuits
What mounting method is required for integration?
It is supplied for PCB mounting as a surface-mount PowerPAK 1212-8W package to facilitate Compact board layouts and automated placement.
What gate-voltage limits should be observed during drive design?
The device must not be exposed to gate-source voltages beyond 20V to avoid overstress of the gate dielectric.
How does thermal capability affect cooling requirements?
With 62.5W maximum power dissipation and an elevated 175°C operating ceiling, board- and heatsinking strategies should be sized to keep junction temperatures within safe margins for continuous operation.
What environmental temperature range can it tolerate?
It operates across a wide span from -55°C up to 175°C, allowing use in both cold-start and high-heat scenarios.
Which characteristic helps reduce switching losses?
The combination of an 8nC gate charge and low on-resistance contributes to lower switching and conduction losses in high-frequency applications.
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