Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212

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RS庫存編號:
178-3726
製造零件編號:
SQS944ENW-T1_GE3
製造商:
Vishay Siliconix
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品牌

Vishay Siliconix

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

6A

Maximum Drain Source Voltage Vds

40V

Package Type

PowerPAK 1212

Series

TrenchFET

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

40mΩ

Channel Mode

Enhancement

Forward Voltage Vf

0.82V

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

27.8W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

7.6nC

Maximum Operating Temperature

175°C

Transistor Configuration

Dual

Standards/Approvals

No

Length

3.15mm

Height

1.07mm

Width

3.15 mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

豁免

COO (Country of Origin):
CN
TrenchFET® power MOSFET

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