ROHM R6520ENX Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220FM R6520ENX
- RS庫存編號:
- 177-6458
- 製造零件編號:
- R6520ENX
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 2 件）*
TWD192.00
(不含稅)
TWD201.60
(含稅)
添加 14 件 件可免費送貨
最後的 RS 庫存
- 加上 2 件從 2026年2月23日 起發貨
- 最終 432 件從 2026年3月02日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 2 - 8 | TWD96.00 | TWD192.00 |
| 10 - 48 | TWD93.50 | TWD187.00 |
| 50 - 98 | TWD92.00 | TWD184.00 |
| 100 - 248 | TWD89.00 | TWD178.00 |
| 250 + | TWD87.00 | TWD174.00 |
* 參考價格
- RS庫存編號:
- 177-6458
- 製造零件編號:
- R6520ENX
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 20A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | TO-220FM | |
| Series | R6520ENX | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 200mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 61nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 68W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.4mm | |
| Width | 4.8 mm | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 20A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type TO-220FM | ||
Series R6520ENX | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 200mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 61nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 68W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 150°C | ||
Height 15.4mm | ||
Width 4.8 mm | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Automotive Standard No | ||
豁免
- COO (Country of Origin):
- JP
R6520ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Low on-resistance
Fast switching speed
Parallel use is easy
Pb-free plating
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