ROHM Type N-Channel MOSFET, 7 A, 600 V Enhancement, 3-Pin TO-220FM R6007ENX

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TWD304.00

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TWD319.20

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50 - 90TWD29.60TWD296.00
100 - 190TWD28.90TWD289.00
200 - 390TWD28.10TWD281.00
400 +TWD27.40TWD274.00

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RS庫存編號:
172-0548
製造零件編號:
R6007ENX
製造商:
ROHM
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品牌

ROHM

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

7A

Maximum Drain Source Voltage Vds

600V

Package Type

TO-220FM

Mount Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance Rds

1.20Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.5V

Maximum Power Dissipation Pd

40W

Typical Gate Charge Qg @ Vgs

20nC

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Height

15.4mm

Width

4.8 mm

Length

10.3mm

COO (Country of Origin):
JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Low on-resistance.

Fast switching speed.

Gate-source voltage (VGSS) guaranteed to be ±20V.

Drive circuits can be simple.

Parallel use is easy.

Pb-free lead plating

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