製造零件編號

ROHM R6520ENX Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220FM R6520ENX

RS庫存編號:: 177-6115
製造零件編號:: R6520ENX
製造商:: ROHM

ROHM R6520ENX Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220FM R6520ENX

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可享批量折扣

小計（1 袋，共 500 件）*

TWD44,550.00

(不含稅)

TWD46,780.00

庫存資訊目前無法存取 - 請稍後再回來查看

單位	每單位	每袋*
500 - 500	TWD89.10	TWD44,550.00
1000 - 1000	TWD88.20	TWD44,100.00
1500 +	TWD87.30	TWD43,650.00

* 參考價格

RS庫存編號:: 177-6115
製造零件編號:: R6520ENX
製造商:: ROHM

產品概覽和技術數據資料表

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產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	ROHM
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	20A
	Maximum Drain Source Voltage Vds	650V
	Package Type	TO-220FM
	Series	R6520ENX
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	200mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	30 V
	Maximum Power Dissipation Pd	68W
	Typical Gate Charge Qg @ Vgs	61nC
	Maximum Operating Temperature	150°C
	Height	15.4mm
	Length	10.3mm
	Standards/Approvals	No
	Width	4.8 mm
	Automotive Standard	No

	選取全部
	品牌 ROHM
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 20A
	Maximum Drain Source Voltage Vds 650V
	Package Type TO-220FM
	Series R6520ENX
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 200mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 30 V
	Maximum Power Dissipation Pd 68W
	Typical Gate Charge Qg @ Vgs 61nC
	Maximum Operating Temperature 150°C
	Height 15.4mm
	Length 10.3mm
	Standards/Approvals No
	Width 4.8 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: JP

R6520ENX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.

Low on-resistance

Fast switching speed

Parallel use is easy

Pb-free plating

ROHM R6520ENX Type N-Channel MOSFET, 20 A, 650 V Enhancement, 3-Pin TO-220FM R6520ENX

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