ROHM Type N-Channel MOSFET, 10 A, 800 V Enhancement, 3-Pin TO-220FM R8010ANX
- RS庫存編號:
- 172-0513
- 製造零件編號:
- R8010ANX
- 製造商:
- ROHM
小計(1 包,共 2 件)*
TWD267.00
(不含稅)
TWD280.36
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 26 件從 2026年3月11日 起裝運發貨
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單位 | 每單位 | 每包* |
|---|---|---|
| 2 + | TWD133.50 | TWD267.00 |
* 參考價格
- RS庫存編號:
- 172-0513
- 製造零件編號:
- R8010ANX
- 製造商:
- ROHM
規格
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法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 10A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FM | |
| Mount Type | Surface Mount | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.56Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.5V | |
| Typical Gate Charge Qg @ Vgs | 62nC | |
| Maximum Power Dissipation Pd | 40W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Height | 15.4mm | |
| Length | 10.3mm | |
| Width | 4.8 mm | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 10A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FM | ||
Mount Type Surface Mount | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.56Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.5V | ||
Typical Gate Charge Qg @ Vgs 62nC | ||
Maximum Power Dissipation Pd 40W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Height 15.4mm | ||
Length 10.3mm | ||
Width 4.8 mm | ||
- COO (Country of Origin):
- JP
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
10V-drive type
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free
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