ROHM N-Channel MOSFET, 5 A, 800 V, 3-Pin TO-220FM R8005ANX

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TWD678.00

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TWD711.90

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10 - 40TWD67.80TWD678.00
50 - 90TWD64.40TWD644.00
100 - 190TWD61.20TWD612.00
200 - 390TWD58.10TWD581.00
400 +TWD55.20TWD552.00

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RS庫存編號:
172-0491
製造零件編號:
R8005ANX
製造商:
ROHM
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品牌

ROHM

Channel Type

N

Maximum Continuous Drain Current

5 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

3.69 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5V

Minimum Gate Threshold Voltage

3V

Maximum Power Dissipation

51 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Number of Elements per Chip

1

Width

4.8mm

Length

10.3mm

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

21 nC @ 10 V

Height

15.4mm

Forward Diode Voltage

1.5V

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

10V-drive type
Nch Power MOSFET
Fast Switching Speed
Drive circuits can be simple
Parallel use is easy
Pb Free

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