ROHM N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FM R6009JNXC7G

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RS庫存編號:
185-1294
製造零件編號:
R6009JNXC7G
製造商:
ROHM
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品牌

ROHM

Channel Type

N

Maximum Continuous Drain Current

9 A

Maximum Drain Source Voltage

600 V

Package Type

TO-220FM

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

580 mΩ

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

7V

Minimum Gate Threshold Voltage

5V

Maximum Power Dissipation

53 W

Transistor Configuration

Single

Maximum Gate Source Voltage

±30 V

Width

5mm

Typical Gate Charge @ Vgs

22 nC @ 15 V

Length

10.3mm

Maximum Operating Temperature

+150 °C

Number of Elements per Chip

1

Height

16.27mm

Minimum Operating Temperature

-55 °C

COO (Country of Origin):
KP
R6009JNX is a power MOSFET with fast reverse recovery time (trr), suitable for the switching applications.

Fast reverse recovery time (trr)
Low on-resistance
Fast switching speed
Drive circuits can be simple
Pb-free plating , RoHS compliant

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