ROHM Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-220FM R8003KNXC7G
- RS庫存編號:
- 235-2700
- 製造零件編號:
- R8003KNXC7G
- 製造商:
- ROHM
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 5 件）*
TWD292.00
(不含稅)
TWD306.60
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 1,000 件準備從其他地點送貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每包* |
|---|---|---|
| 5 - 45 | TWD58.40 | TWD292.00 |
| 50 - 95 | TWD57.00 | TWD285.00 |
| 100 - 245 | TWD55.60 | TWD278.00 |
| 250 - 495 | TWD54.20 | TWD271.00 |
| 500 + | TWD52.80 | TWD264.00 |
* 參考價格
- RS庫存編號:
- 235-2700
- 製造零件編號:
- R8003KNXC7G
- 製造商:
- ROHM
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | ROHM | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 3A | |
| Maximum Drain Source Voltage Vds | 800V | |
| Package Type | TO-220FM | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 1.8Ω | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 11.5nC | |
| Maximum Power Dissipation Pd | 36W | |
| Maximum Operating Temperature | 150°C | |
| Height | 29.87mm | |
| Length | 10.3mm | |
| Width | 5 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 ROHM | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 3A | ||
Maximum Drain Source Voltage Vds 800V | ||
Package Type TO-220FM | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 1.8Ω | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 11.5nC | ||
Maximum Power Dissipation Pd 36W | ||
Maximum Operating Temperature 150°C | ||
Height 29.87mm | ||
Length 10.3mm | ||
Width 5 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The ROHM R8xxxKNx series are high-speed switching products, super Junction MOSFET, that place an emphasis on high efficiency. It achieve higher efficiency via high-speed switching. High-speed switching makes it possible to contribute to higher efficiency in PFC and LLC circuits.
Low on-resistance
Ultra fast switching speed
Parallel use is easy
Pb-free plating
RoHS compliant
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