Taiwan Semiconductor Type N-Channel MOSFET, 80 A, 30 V Enhancement, 4-Pin TO-252 TSM060N03CP ROG
- RS庫存編號:
- 171-3651
- 製造零件編號:
- TSM060N03CP ROG
- 製造商:
- Taiwan Semiconductor
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 25 件）*
TWD600.00
(不含稅)
TWD630.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 600 個，準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 600 | TWD24.00 | TWD600.00 |
| 625 - 1225 | TWD23.40 | TWD585.00 |
| 1250 + | TWD23.00 | TWD575.00 |
* 參考價格
- RS庫存編號:
- 171-3651
- 製造零件編號:
- TSM060N03CP ROG
- 製造商:
- Taiwan Semiconductor
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Taiwan Semiconductor | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 9mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 54W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Forward Voltage Vf | 1V | |
| Typical Gate Charge Qg @ Vgs | 11.1nC | |
| Maximum Operating Temperature | 150°C | |
| Length | 6.5mm | |
| Standards/Approvals | No | |
| Width | 5.8 mm | |
| Height | 2.3mm | |
| Automotive Standard | IEC 61249 | |
| 選取全部 | ||
|---|---|---|
品牌 Taiwan Semiconductor | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 9mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 54W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Forward Voltage Vf 1V | ||
Typical Gate Charge Qg @ Vgs 11.1nC | ||
Maximum Operating Temperature 150°C | ||
Length 6.5mm | ||
Standards/Approvals No | ||
Width 5.8 mm | ||
Height 2.3mm | ||
Automotive Standard IEC 61249 | ||
The Taiwan Semiconductor 30V, 80A, 3+Tab pin, N-channel power MOSFET has single transistor configuration and enhancement channel mode.
RoHS compliant
150 °C maximum operating temperature
54W max. power dissipation
Gate threshold voltage ranges between 1V-2.5V
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