Toshiba SSM6K403TU Type N-Channel Field Effect Transistor, 4.2 A, 20 V Enhancement, 6-Pin UF6 SSM6K403TU
- RS庫存編號:
- 171-2490
- 製造零件編號:
- SSM6K403TU
- 製造商:
- Toshiba
此圖片僅供參考,請參閲產品詳細資訊及規格
可享批量折扣
小計(1 包,共 25 件)*
TWD280.00
(不含稅)
TWD294.00
(含稅)
訂單超過 $1,300.00 免費送貨
最後的 RS 庫存
- 最終 1,400 個,準備發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 25 - 725 | TWD11.20 | TWD280.00 |
| 750 - 1475 | TWD10.90 | TWD272.50 |
| 1500 + | TWD10.60 | TWD265.00 |
* 參考價格
- RS庫存編號:
- 171-2490
- 製造零件編號:
- SSM6K403TU
- 製造商:
- Toshiba
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Product Type | Field Effect Transistor | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 4.2A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Package Type | UF6 | |
| Series | SSM6K403TU | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 66mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 16.8nC | |
| Maximum Gate Source Voltage Vgs | ±10 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.7mm | |
| Height | 0.7mm | |
| Standards/Approvals | No | |
| Width | 2 mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Product Type Field Effect Transistor | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 4.2A | ||
Maximum Drain Source Voltage Vds 20V | ||
Package Type UF6 | ||
Series SSM6K403TU | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 66mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 16.8nC | ||
Maximum Gate Source Voltage Vgs ±10 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Length 1.7mm | ||
Height 0.7mm | ||
Standards/Approvals No | ||
Width 2 mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- TH
1.5V drive
Low ON-resistance: Ron = 66mΩ (max) (@VGS = 1.5V)
Ron = 43mΩ (max) (@VGS = 1.8V)
Ron = 32mΩ (max) (@VGS = 2.5V)
Ron = 28mΩ (max) (@VGS = 4.0V)
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