onsemi BS270 Type N-Channel Field Effect Transistor, 400 mA, 60 V Enhancement, 3-Pin TO-92 BS270
- RS庫存編號:
- 807-5184
- 製造零件編號:
- BS270
- 製造商:
- onsemi
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 包，共 50 件）*
TWD490.00
(不含稅)
TWD514.50
(含稅)
訂單超過 $1,300.00 免費送貨
正在逐步停售
- 350 件準備從其他地點送貨
- 最終 200 件從 2026年4月03日 起發貨
單位 | 每單位 | 每包* |
|---|---|---|
| 50 - 2450 | TWD9.80 | TWD490.00 |
| 2500 - 4950 | TWD9.60 | TWD480.00 |
| 5000 + | TWD9.50 | TWD475.00 |
* 參考價格
- RS庫存編號:
- 807-5184
- 製造零件編號:
- BS270
- 製造商:
- onsemi
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | onsemi | |
| Channel Type | Type N | |
| Product Type | Field Effect Transistor | |
| Maximum Continuous Drain Current Id | 400mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | BS270 | |
| Package Type | TO-92 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 625mW | |
| Forward Voltage Vf | 1.2V | |
| Maximum Gate Source Voltage Vgs | ±20 V | |
| Maximum Operating Temperature | 150°C | |
| Width | 3.93 mm | |
| Height | 4.7mm | |
| Length | 4.7mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 onsemi | ||
Channel Type Type N | ||
Product Type Field Effect Transistor | ||
Maximum Continuous Drain Current Id 400mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Series BS270 | ||
Package Type TO-92 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 625mW | ||
Forward Voltage Vf 1.2V | ||
Maximum Gate Source Voltage Vgs ±20 V | ||
Maximum Operating Temperature 150°C | ||
Width 3.93 mm | ||
Height 4.7mm | ||
Length 4.7mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology. This high density process has been designed to minimise on-state resistance, provide rugged and reliable performance and fast switching.
MOSFET Transistors, ON Semi
ON Semi offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The Advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
ON Semi MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.
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