Toshiba N-Channel MOSFET Transistor, 20 A, 600 V, 3-Pin SC-67 TK20A60T(Q)
- RS庫存編號:
- 582-026
- 製造零件編號:
- TK20A60T(Q)
- 製造商:
- Toshiba
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- RS庫存編號:
- 582-026
- 製造零件編號:
- TK20A60T(Q)
- 製造商:
- Toshiba
規格
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產品詳細資訊
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選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Toshiba | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 20 A | |
| Maximum Drain Source Voltage | 600 V | |
| Package Type | SC-67 | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 190 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation | 45 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -30 V, +30 V | |
| Width | 4.5mm | |
| Transistor Material | Si | |
| Number of Elements per Chip | 1 | |
| Length | 10mm | |
| Typical Gate Charge @ Vgs | 30 nC @ 10 V | |
| Maximum Operating Temperature | +150 °C | |
| Minimum Operating Temperature | -55 °C | |
| Height | 8.1mm | |
| 選取全部 | ||
|---|---|---|
品牌 Toshiba | ||
Channel Type N | ||
Maximum Continuous Drain Current 20 A | ||
Maximum Drain Source Voltage 600 V | ||
Package Type SC-67 | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 190 mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation 45 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -30 V, +30 V | ||
Width 4.5mm | ||
Transistor Material Si | ||
Number of Elements per Chip 1 | ||
Length 10mm | ||
Typical Gate Charge @ Vgs 30 nC @ 10 V | ||
Maximum Operating Temperature +150 °C | ||
Minimum Operating Temperature -55 °C | ||
Height 8.1mm | ||
- COO (Country of Origin):
- JP
MOSFET N-Channel, TK2x Series, Toshiba
MOSFET Transistors, Toshiba
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