製造零件編號

Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23 PMV20XNER

RS庫存編號:: 170-5372
製造零件編號:: PMV20XNER
製造商:: Nexperia

Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23 PMV20XNER

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 包，共 25 件）*

TWD270.00

(不含稅)

TWD283.50

訂單超過 $1,300.00 免費送貨

暫時缺貨

3,000 件從 2026年6月03日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每包*
25 - 725	TWD10.80	TWD270.00
750 - 1475	TWD10.40	TWD260.00
1500 +	TWD10.20	TWD255.00

* 參考價格

RS庫存編號:: 170-5372
製造零件編號:: PMV20XNER
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	7.2A
	Maximum Drain Source Voltage Vds	30V
	Series	PMV20XNE
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	38mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	12.4nC
	Maximum Gate Source Voltage Vgs	12 V
	Maximum Power Dissipation Pd	6.94W
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	No
	Length	3mm
	Height	1mm
	Width	1.4 mm
	Automotive Standard	No

	選取全部
	品牌 Nexperia
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 7.2A
	Maximum Drain Source Voltage Vds 30V
	Series PMV20XNE
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 38mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 12.4nC
	Maximum Gate Source Voltage Vgs 12 V
	Maximum Power Dissipation Pd 6.94W
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals No
	Length 3mm
	Height 1mm
	Width 1.4 mm
	Automotive Standard No

COO (Country of Origin):: CN

Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Enhanced power dissipation capability of 1200 mW

ElectroStatic Discharge (ESD) protection: 2 kV HBM

Target applications

Relay driver

High-speed line driver

Low-side load switch

Switching circuits

Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23 PMV20XNER

訂單超過 $1,300.00 免費送貨

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