Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23

RS庫存編號:: 151-3017
製造零件編號:: PMV65XPEAR
製造商:: Nexperia

Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD15,900.00

(不含稅)

TWD16,680.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

3,000 件從 2026年7月29日起裝運發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 3000	TWD5.30	TWD15,900.00
6000 +	TWD5.10	TWD15,300.00

* 參考價格

RS庫存編號:: 151-3017
製造零件編號:: PMV65XPEAR
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Channel Type	Type P
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	-3.3A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	125mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	5nC
	Maximum Power Dissipation Pd	6.25W
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Width	1.4 mm
	Length	3mm
	Height	1.1mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Nexperia
	Channel Type Type P
	Product Type MOSFET
	Maximum Continuous Drain Current Id -3.3A
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 125mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 5nC
	Maximum Power Dissipation Pd 6.25W
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Width 1.4 mm
	Length 3mm
	Height 1.1mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Very fast switching

Enhanced power dissipation capability: Ptot = 890 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

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