製造零件編號

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23

RS庫存編號:: 153-0707
製造零件編號:: PMV27UPEAR
製造商:: Nexperia

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23

此圖片僅供參考，請參閲產品詳細資訊及規格

可享批量折扣

小計（1 卷，共 3000 件）*

TWD17,700.00

(不含稅)

TWD18,600.00

訂單超過 $1,300.00 免費送貨

暫時缺貨

3,000 件從 2026年5月13日起裝運發貨
加上 3,000 件從 2026年5月20日起發貨

**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。

單位	每單位	每卷*
3000 - 3000	TWD5.90	TWD17,700.00
6000 +	TWD5.70	TWD17,100.00

* 參考價格

RS庫存編號:: 153-0707
製造零件編號:: PMV27UPEAR
製造商:: Nexperia

規格

產品概覽和技術數據資料表

法例與合規

產品詳細資訊

透過選取一個或多個屬性來查找類似產品。

選取全部	屬性	值
	品牌	Nexperia
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	-5.6A
	Maximum Drain Source Voltage Vds	-20V
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	63mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	8 V
	Maximum Power Dissipation Pd	4.15W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	14.7nC
	Maximum Operating Temperature	150°C
	Height	1mm
	Width	1.4 mm
	Standards/Approvals	No
	Length	3mm
	Automotive Standard	AEC-Q101

	選取全部
	品牌 Nexperia
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id -5.6A
	Maximum Drain Source Voltage Vds -20V
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 63mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 8 V
	Maximum Power Dissipation Pd 4.15W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 14.7nC
	Maximum Operating Temperature 150°C
	Height 1mm
	Width 1.4 mm
	Standards/Approvals No
	Length 3mm
	Automotive Standard AEC-Q101

P-channel MOSFETs, The perfect fit for your design when N-channels simply aren’t suitable, Our extensive MOSFET catalog also includes many P-channel device families, based on Nexperia’s leading Trench technology. Rated from 12 V to 70 V and housed in low- and medium-power packages, they offer our familiar blend of high efficiency and high reliability.

20 V, P-channel Trench MOSFET, P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Trench MOSFET technology

Low threshold voltage

Very fast switching

Enhanced power dissipation capability: Ptot = 980 mW

ElectroStatic Discharge (ESD) protection 2 kV HBM

AEC-Q101 qualified

LED driver

Power management

High-side loadswitch

Switching circuits

Nexperia Type P-Channel MOSFET, -5.6 A, -20 V Enhancement, 3-Pin SOT-23

訂單超過 $1,300.00 免費送貨

相關連結