Nexperia Type N-Channel MOSFET, 3.1 A, 60 V Enhancement, 3-Pin SOT-23

此圖片僅供參考,請參閲產品詳細資訊及規格

可享批量折扣

小計(1 卷,共 3000 件)*

TWD14,100.00

(不含稅)

TWD14,820.00

(含稅)

Add to Basket
選擇或輸入數量
庫存資訊目前無法查詢
單位
每單位
每卷*
3000 - 3000TWD4.70TWD14,100.00
6000 +TWD4.60TWD13,800.00

* 參考價格

RS庫存編號:
151-3050
製造零件編號:
PMV55ENEAR
製造商:
Nexperia
透過選取一個或多個屬性來查找類似產品。
選取全部

品牌

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

3.1A

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

120mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

8.36W

Typical Gate Charge Qg @ Vgs

12.7nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

150°C

Length

3mm

Height

1mm

Width

1.4 mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Automotive MOSFETs, The world's largest portfolio of AEC-Q101 qualified power MOSFETs, An in-depth understanding of automotive system requirements and focused technical capability enables Nexperia to provide power semiconductor solutions across a wide spectrum of applications. From driving a simple lamp to the sophisticated needs of power control in engine, body or chassis applications, Nexperia Power Semiconductors can provide the answer to many automotive system power problems.

AEC-Q101 compliant

Repetitive avalanche rated

Suitable for thermally demanding environments due to 175°C rating

60 V, N-channel Trench MOSFET, N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Logic level compatible

Very fast switching

Trench MOSFET technology

ElectroStatic Discharge (ESD) protection > 2 kV HBM

AEC-Q101 qualified

相關連結