Nexperia PMV20XNE Type N-Channel MOSFET, 7.2 A, 30 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 170-4865
- 製造零件編號:
- PMV20XNER
- 製造商:
- Nexperia
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
小計（1 卷，共 3000 件）*
TWD13,200.00
(不含稅)
TWD13,860.00
(含稅)
訂單超過 $1,300.00 免費送貨
暫時缺貨
- 3,000 件從 2026年5月27日 起裝運發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 3000 | TWD4.40 | TWD13,200.00 |
| 6000 + | TWD4.30 | TWD12,900.00 |
* 參考價格
- RS庫存編號:
- 170-4865
- 製造零件編號:
- PMV20XNER
- 製造商:
- Nexperia
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 7.2A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | PMV20XNE | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 38mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 6.94W | |
| Maximum Gate Source Voltage Vgs | 12 V | |
| Typical Gate Charge Qg @ Vgs | 12.4nC | |
| Maximum Operating Temperature | 150°C | |
| Width | 1.4 mm | |
| Length | 3mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | No | |
| 選取全部 | ||
|---|---|---|
品牌 Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 7.2A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series PMV20XNE | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 38mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 6.94W | ||
Maximum Gate Source Voltage Vgs 12 V | ||
Typical Gate Charge Qg @ Vgs 12.4nC | ||
Maximum Operating Temperature 150°C | ||
Width 1.4 mm | ||
Length 3mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
Robust interfacing between asynchronous and synchronous systems. Flip-flops are Basic storage elements in digital electronics. By only allowing the output to change on an edge transition, flip-flops provide a robust Interface between asynchronous and synchronous systems. With a choice of either positive or negative edge triggered options they provide added design flexibility.
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Trench MOSFET technology
Low threshold voltage
Enhanced power dissipation capability of 1200 mW
ElectroStatic Discharge (ESD) protection: 2 kV HBM
Target applications
Relay driver
High-speed line driver
Low-side load switch
Switching circuits
相關連結
- Nexperia PMV20XNE Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 PMV20XNER
- Nexperia Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type P-Channel MOSFET -20 V Enhancement, 3-Pin SOT-23
- Nexperia Type N-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Nexperia Type P-Channel MOSFET -20 V Enhancement, 3-Pin SOT-23
- Nexperia Type P-Channel MOSFET -20 V Enhancement, 3-Pin SOT-23