Infineon OptiMOS P Type P-Channel MOSFET, 1.5 A, 30 V Enhancement, 3-Pin SOT-23
- RS庫存編號:
- 165-8258
- 製造零件編號:
- BSS314PEH6327XTSA1
- 製造商:
- Infineon
此圖片僅供參考，請參閲產品詳細資訊及規格
可享批量折扣
查看批量定價選項小計（1 卷，共 3000 件）*
TWD9,300.00
(不含稅)
TWD9,780.00
(含稅)
訂單超過 $1,300.00 免費送貨
有庫存
- 加上 3,000 件從 2026年8月10日 起發貨
**需要更多嗎？**輸入您需要的數量，然後按一下「查看送貨日期」以查詢更多庫存和送貨詳細資訊。
單位 | 每單位 | 每卷* |
|---|---|---|
| 3000 - 12000 | TWD3.10 | TWD9,300.00 |
| 15000 + | TWD2.80 | TWD8,400.00 |
* 參考價格
- RS庫存編號:
- 165-8258
- 製造零件編號:
- BSS314PEH6327XTSA1
- 製造商:
- Infineon
規格
產品概覽和技術數據資料表
法例與合規
產品詳細資訊
透過選取一個或多個屬性來查找類似產品。
選取全部 | 屬性 | 值 |
|---|---|---|
| 品牌 | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 1.5A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | SOT-23 | |
| Series | OptiMOS P | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 230mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 500mW | |
| Typical Gate Charge Qg @ Vgs | 2.9nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1.3mm | |
| Automotive Standard | AEC-Q101 | |
| 選取全部 | ||
|---|---|---|
品牌 Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 1.5A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type SOT-23 | ||
Series OptiMOS P | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 230mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 500mW | ||
Typical Gate Charge Qg @ Vgs 2.9nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1.3mm | ||
Automotive Standard AEC-Q101 | ||
- COO (Country of Origin):
- CN
Infineon OptiMOS P Series MOSFET, 30V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSS314PEH6327XTSA1
This p-channel MOSFET serves as a compact surface-mount switching device for low-voltage power control in automotive and industrial electronics. Designed for enhancement-mode operation, it offers controlled conduction for power-path and load-switching tasks across a wide temperature range, making it suitable for demanding thermal environments.
Features and Benefits:
• 30V drain capability enables low-voltage system switching
• 230mΩ Rds(on) delivers efficient conduction for small loads
• 1.5A continuous drain current supports moderate current paths
• 2.9nC typical gate charge reduces switching energy losses
• 20V maximum gate-source rating allows flexible gate drive margins
• Automotive AEC‑Q101 qualification suits vehicle‑grade applications
• 230mΩ Rds(on) delivers efficient conduction for small loads
• 1.5A continuous drain current supports moderate current paths
• 2.9nC typical gate charge reduces switching energy losses
• 20V maximum gate-source rating allows flexible gate drive margins
• Automotive AEC‑Q101 qualification suits vehicle‑grade applications
Applications
• Suitable for battery management and protection circuits
• Ideal for load switching in automotive control modules
• Used with power rails in handheld and portable electronics
• Can be used for small-signal power switching in sensor nodes
• Suitable for surface-mount designs where board space is limited
• Ideal for load switching in automotive control modules
• Used with power rails in handheld and portable electronics
• Can be used for small-signal power switching in sensor nodes
• Suitable for surface-mount designs where board space is limited
What thermal extremes can it tolerate during operation?
It is specified to operate from -55°C up to 150°C, allowing use in environments with wide temperature variation.
How does the package influence board-level integration?
The SOT-23 surface-mount format permits compact placement and automated assembly on densely populated boards.
What power-handling constraints should designers consider?
The device dissipates up to 500mW, so adequate PCB copper and thermal layout are required to manage junction temperature under continuous load.
Which electrical limit governs gate drive selection?
Drive voltages must remain within ±20V relative to the source to avoid gate overstress and ensure reliable switching.
相關連結
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS314PEH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS P Type P-Channel MOSFET 20 V Enhancement, 3-Pin SOT-23 BSS215PH6327XTSA1
- Infineon OptiMOS P Type P-Channel MOSFET 30 V Enhancement, 3-Pin SOT-23 BSS308PEH6327XTSA1
- Infineon OptiMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 100 V Enhancement, 3-Pin SOT-23
- Infineon OptiMOS Type N-Channel MOSFET 55 V Enhancement, 3-Pin SOT-23